2N3955 DATASHEET PDF

2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.

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With an “infinite” heatsink, that is: With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and 2m3955 similar device was created using epitaxial base technology. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.

N-Channel Dual Silicon Junction Field-Effect Transistor

The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.

Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. The art of electronics 2nd ed.

Build your own low-power transmitters: The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Datasehet 7 November The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.

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datasyeet

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It often has a transition frequency of around 3. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

It was introduced in the early s by RCA using datadheet hometaxial power transistor process, transitioned to an catasheet base in the mids.

From Wikipedia, the free encyclopedia. Retrieved 31 October RCA by had changed their specification to give 2.

(PDF) 2N3955 Datasheet download

Views Read Edit View history. The 2N remains very popular as a series pass transistor datasyeet linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

KD are datashewt in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. Retrieved from ” https: It was produced exclusively by the Czechoslovakian electronics company Tesla.

Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. Other manufacturers around this time also would specify similar values e.

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Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range. It has a transition frequency of 2. The KD have higher power and higher current than 2N The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

By using this site, you agree to the Terms of Use and Privacy Policy. KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. The 2N is a silicon NPN power transistor intended for general purpose applications.

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In the sixties and early adtasheet, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N In other projects Wikimedia Commons. Modern 2N datasheets often, but not always, specify f T of 2.

This page was last edited on 22 Novemberat